v ds i d (at v gs =10v) 24a r ds(on) (at v gs =10v) < 12m w r ds(on) (at v gs = 4.5v) < 18m w symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc 110 pulsed drain current c continuous drain current g parameter typ max t c =25c 1.9 13 t c =100c junction and storage temperature range -55 to 150 c thermal characteristics units maximum junction-to-ambient a c/w r q ja 29 56 35 v 20 gate-source voltage drain-source voltage 30 the AON6204 uses trench mosfet technology that is uniquely optimized to provide the most efficient hi gh frequency switching performance.power losses are minimized due to an extremely low combination of r ds(on) and c rss .in addition,switching behavior is well controlled with a "schottky style" soft recovery bo dy diode. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v avalanche energy l=0.1mh c mj avalanche current c 11 continuous drain current 22 14 a 21 a t a =25c i dsm a t a =70c i d 24 19 t c =25c t c =100c power dissipation b p d w power dissipation a p dsm w t a =70c 31 1.2 t a =25c maximum junction-to-case c/w c/w maximum junction-to-ambient a d 3.3 67 4 g d s top view 1 2 3 4 8 7 6 5 www.freescale.net.cn 1/6 AON6204 30v n-channel mosfet general description features
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.4 1.9 2.4 v i d(on) 110 a 10 12 t j =125c 14.5 18 14.5 18 m w g fs 33 s v sd 0.72 1 v i s 30 a c iss 400 510 670 pf c oss 150 220 310 pf c rss 13 22 38 pf r g 0.8 1.6 2.4 w q g (10v) 6 8 10 nc q g (4.5v) 2.6 3.5 4.0 nc q gs 1.6 2 2.4 nc q gd 0.8 1.4 2 nc t d(on) 4.3 ns t r 8 ns t d(off) 15.8 ns t f 3.4 ns t rr 8 11 14 ns q rr 13 17 21 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=500a/ m s v gs =0v, v ds =15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =15a gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =20a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. the maximum current rating is limited by package . h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with ta=25c. www.freescale.net.cn 2/6 AON6204 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 10 20 30 40 50 60 0 1 2 3 4 5 6 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 8 10 12 14 16 18 20 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =15a v gs =10v i d =20a 5 10 15 20 25 30 35 40 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3v 4.5v 10v 4v 3.5v 7v 6v 5v www.freescale.net.cn 3/6 AON6204 30v n-channel mosfet
typical electrical and thermal characteristics 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 1ms 100us dc r ds(on) limited t j(max) =150c t c =25c 10 m s 0 2 4 6 8 10 0 2 4 6 8 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q q q q jc normalized transient thermal resistance c oss c rss v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c r q jc =4c/w www.freescale.net.cn 4/6 AON6204 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) z q q q q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 10.0 100.0 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) t a =25c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c t a =150c t a =100c t a =125c r q ja =67c/w www.freescale.net.cn 5/6 AON6204 30v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 6/6 AON6204 30v n-channel mosfet
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